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Start of funding 01.07.2026
Heterogeneous SiC-InGaAs Quantum Photonic Integration
Prof. Dr. Jonathan Finley
Technische Universität München
Walter Schottky Institut
Prof. Dr. Jelena Vuckovic
Stanford University
Ginzton Laboratory
This project investigates the heterogeneous integration of silicon carbide (SiC) color centers with InGaAs quantum dots as a platform for future quantum networks. SiC color centers on the SiC-on-Insulator platform offer coherent, CMOS-compatible photon sources above 900 nm. Electrically tunable InGaAs quantum dots in GaAs enable precise, on-demand Stark tuning into resonance with SiC color center transitions. A central challenge is achieving efficient evanescent coupling between the two material platforms through inverse-designed nanostructures and a reliable transfer-printing process. The goal of this collaboration is the first demonstration of evanescent coupling between a Stark-tuned InGaAs quantum dot and a SiC color center in a heterogeneously integrated device. The TUM team contributes its expertise in the growth and electrical control of InGaAs quantum dots, while the Stanford group contributes world-leading know-how in inverse-designed nanophotonics and SiC-on-Insulator technology. The jointly realized SiC-InGaAs devices lay the foundation for future hybrid quantum network nodes and for larger-scale joint research efforts.